The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Jan. 10, 2013
Applicants:
Sergey Sofer, Rishon Lezion, IL;
Michael Priel, Netanya, IL;
Noam Sivan, Ganey Tikva, IL;
Inventors:
Assignee:
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/003 (2006.01); H03K 19/0944 (2006.01);
U.S. Cl.
CPC ...
H03K 19/00384 (2013.01); H03K 19/0944 (2013.01);
Abstract
The invention provides a method for recovering NBTI/PBTI related parameter degradation in MOSFET devices. The method includes operating the at least one MOSFET device in a standby mode, exiting the at least one MOSFET device from the standby mode, holding the at least one MOSFET device in an active state for a predetermined time span after exiting the standby mode, and operating the at least one MOSFET device in an operational mode after the predetermined time span has elapsed.