Freescale Semiconductor,inc.

Noam Sivan

Sergey Sofer

Michael Priel

Moshe Anschel

Ziv Zamsky

Eitan Zmora

Lior Moheban

Kostantin Godin

Avi Elazary

Vlad Goldman

Yacov Efrat

Amir Nave

Leonid Rabinovich

The invention provides a method for recovering NBTI/PBTI related parameter degradation in MOSFET devices. The method includes operating the at least one MOSFET device in a standby mode, exiting the at least one MOSFET device from the standby mode, holding the at least one MOSFET device in an active state for a predetermined time span after exiting the standby mode, and operating the at least one MOSFET device in an operational mode after the predetermined time span has elapsed.

Method and control device for recovering NBTI/PBTI related parameter degradation in MOSFET devices

A multi-level clock signal distribution network comprises a plurality of lower network levels comprising at least a first lower network level and a lowermost network level that is connected to one or more lowermost clock signal driving circuits connectable to receive a clock signal; and a topmost network level arranged to distribute the clock signal to a plurality of clocked circuits, and connected to a plurality of topmost clock signal driving circuits connected to receive the clock signal from the first lower network level. The lowermost network level comprises at least one net and each of the plurality of lower network levels except the lowermost network level comprises a plurality of nets and is connected to a corresponding plurality of lower clock signal driving circuits being connected to receive the clock signal from a subjacent one of the plurality of lower network levels, wherein each of the plurality of nets is driven by all nets of the subjacent one.

Multi-level clock signal distribution network and integrated circuit

A device that includes a dual edge triggered flip-flop that has state retention capabilities, the dual edge triggered flip-flop includes: a retention latch that includes a first inverter, a second inverter and a first transfer gate; wherein the first and second inverters receive power during a power gating period; a second latch that includes a third inverter, a fourth inverter and a second transfer gate; wherein the third and fourth inverters are powered down during a power gating period; a third transfer gate that is coupled between input nodes of the retention latch and the second latch; wherein the third transfer gate is opened during the power gating period; wherein the first transfer gate is controlled by a control signal and the second transfer gate is controlled by an inverted control signal; wherein the retention latch stores, at the end of the power gating period a retention value; wherein the retention value is selected, in response to a value of the control signal when the power gating period starts, out of a first initial value stored at the retention latch at the beginning of the power gating period and a second initial value stored at the second latch at the beginning of the power gating period.

Method for power reduction and a device having power reduction capabilities

A device that includes: a first bus, connected between a first logic and a first circuit; a group of second buses connected between the first logic and between multiple non-high impedance circuit access logics associated with multiple circuits; wherein each circuit access logic is adapted to: (i) provide to the first logic, a circuit write value during a circuit writing period and during an idle period that follows the circuit writing period and ends when another circuit is allowed to write; and (ii) provide a default value when another circuit is allowed to write; and wherein the first logic is adapted to alter a state of the first bus in response to a change between two consecutive circuit write values.

Non-high impedence device and method for reducing energy consumption

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Ganey Tikva, Israel

Noam Sivan