Location History:
- Schenectady, NY (US) (2005)
- Niskayuna, NY (US) (2004 - 2012)
Company Filing History:
7 out of 51,907 
1 out of 581 
Years Active: 2004-2012
Title: The Innovations of Nicole Andrea Evers
Introduction
Nicole Andrea Evers is a prominent inventor based in Niskayuna, NY (US). She has made significant contributions to the field of electronic devices, particularly those utilizing gallium nitride technology. With a total of 8 patents to her name, Evers has established herself as a key figure in her area of expertise.
Latest Patents
Among her latest patents is the development of homoepitaxial gallium-nitride-based electronic devices and methods for producing them. This invention provides an electronic device that includes at least one epitaxial semiconductor layer on a single crystal substrate made of gallium nitride, which has a dislocation density of less than about 10 per cm. Additionally, she has patented a homoepitaxial gallium nitride-based photodetector, which comprises a gallium nitride substrate and at least one active layer. This photodetector can feature various structures, including metal-semiconductor-metal, P-i-N, and Schottky-barrier structures.
Career Highlights
Evers has worked with notable companies such as General Electric Company and Momentive Performance Materials GmbH. Her experience in these organizations has contributed to her innovative work in the field of electronic devices.
Collaborations
Throughout her career, Evers has collaborated with esteemed colleagues, including Mark Philip D'Evelyn and Janos Gyorgy Sarkozi. These partnerships have likely enhanced her research and development efforts.
Conclusion
Nicole Andrea Evers is a trailblazer in the field of gallium nitride technology, with a remarkable portfolio of patents and a strong professional background. Her contributions continue to influence advancements in electronic devices.