The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2004

Filed:

Apr. 20, 2001
Applicant:
Inventors:

Mark Philip D'Evelyn, Niskayuna, NY (US);

Nicole Andrea Evers, Niskayuna, NY (US);

Kanin Chu, Nashua, NH (US);

Assignee:

General Electic Company, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/300 ;
U.S. Cl.
CPC ...
H01L 3/300 ;
Abstract

A photodetector comprising a gallium nitride substrate, at least one active layer disposed on the substrate, and a conductive contact structure affixed to the active layer and, in some embodiments, the substrate. The invention includes photodetectors having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers may comprise Ga Al In N P As , or, preferably, Ga Al N. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 10 cm . A method of making the photodetector is also disclosed.


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