The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2007
Filed:
Sep. 01, 2004
Mark Philip D'evelyn, Niskayuna, NY (US);
Nicole Andrea Evers, Niskayuna, NY (US);
Kanin Chu, Nashua, NY (US);
Mark Philip D'Evelyn, Niskayuna, NY (US);
Nicole Andrea Evers, Niskayuna, NY (US);
Kanin Chu, Nashua, NY (US);
General Electric Company, Schnectady, NY (US);
Abstract
A photodetector () comprising a gallium nitride substrate, at least one active layer () disposed on the substrate (), and a conductive contact structure () affixed to the active layer () and, in some embodiments, the substrate (). The invention includes photodetectors () having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers () may comprise GaAlInNPAs, or, preferably, GaAlN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 10cm. A method of making the photodetector () is also disclosed.