The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
Dec. 27, 2002
Mark Phillip D'evelyn, Niskayuna, NY (US);
Nicole Andrea Evers, Niskayuna, NY (US);
An-ping Zhang, Niskayuna, NY (US);
Jesse Berkley Tucker, Niskayuna, NY (US);
Jeffrey Bernard Fedison, Niskayuna, NY (US);
Mark Phillip D'Evelyn, Niskayuna, NY (US);
Nicole Andrea Evers, Niskayuna, NY (US);
An-Ping Zhang, Niskayuna, NY (US);
Jesse Berkley Tucker, Niskayuna, NY (US);
Jeffrey Bernard Fedison, Niskayuna, NY (US);
Momentive Performance Materials Inc., Albany, NY (US);
Abstract
There is provided an electronic device. The electronic device includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 10per cm. A method of forming an electronic device is also provided. The method includes providing a single crystal substrate comprised of gallium nitride having a dislocation density less than about 10per cm, and homoepitaxially forming at least one semiconductor layer on the substrate.