Niang Hangzo

Title: Niang Hangzo: Innovator in Low Voltage CMOS Bandgap Reference Technology

Introduction

Niang Hangzo is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of electronics, particularly in the development of low voltage CMOS bandgap reference technology. His innovative work has led to the creation of a patent that enhances the efficiency and performance of electronic circuits.

Latest Patents

Niang Hangzo holds a patent for a low voltage CMOS bandgap reference. This invention comprises a PMOS transistor and NMOS transistor in a pnp bipolar junction transistor connected in series in a first leg. The bandgap reference generator includes a second leg that consists of a PMOS transistor, an NMOS transistor, a resistor, and a pnp bipolar junction transistor. A bias circuit provides a bias to a mirror formed by the gates of the PMOS transistors to lower the operating voltage of the bandgap reference generator. Additionally, a second biasing circuit may provide bias to the mirror formed of the NMOS transistors. The invention also features time-based and DC bias-based startup circuitry and method.

Career Highlights

Niang Hangzo is currently employed at Silicon Storage Technology, Inc. His work at this company has allowed him to focus on advancing technologies that improve electronic device performance. With a patent count of 1 patent, he continues to contribute to the field of electronics through his innovative designs and solutions.

Collaborations

Niang collaborates with talented individuals such as Hieu Van Tran and Tam Huu Tran. These partnerships enhance the creative process and lead to the development of cutting-edge technologies.

Conclusion

Niang Hangzo is a distinguished inventor whose work in low voltage CMOS bandgap reference technology has made a significant impact in the electronics industry. His innovative spirit and collaboration with skilled colleagues continue to drive advancements in this field.