Neil Bruce Rosengren

Title: Neil Bruce Rosengren: Innovator in High-k Film Etching

Introduction

Neil Bruce Rosengren is a notable inventor based in Plymouth, MN (US). He has made significant contributions to the field of semiconductor processing, particularly in the etching of high-k films. His innovative methods have implications for the advancement of electronic devices.

Latest Patents

Neil Bruce Rosengren holds a patent for a "Method for etching high-k films in solutions comprising dilute fluoride species." This patent describes a process for etching high dielectric constant (high-k) films, such as Zr Si O, Hf Si O, Zr Hf O, Hf Al O, and Zr Al O, more rapidly than coexisting SiO, polysilicon, silicon, and other films. The process involves contacting the films with an aqueous solution containing a fluoride species at a concentration that allows for selective etching of the high-k film. The etching solution is preferably used above ambient temperature to enhance the etch selectivity of the high-k films relative to other materials. Additionally, the etch rate can be adjusted by controlling the pH of the solution through the addition of acids or bases.

Career Highlights

Neil Bruce Rosengren is associated with Fsi International, Inc., where he has applied his expertise in semiconductor technology. His work has contributed to advancements in the manufacturing processes of electronic components.

Collaborations

Throughout his career, Neil has collaborated with notable colleagues, including Kurt Karl Christenson and Thomas J Wagener. These collaborations have fostered innovation and development in the field of semiconductor processing.

Conclusion

Neil Bruce Rosengren's contributions to the etching of high-k films represent a significant advancement in semiconductor technology. His innovative methods and collaborations continue to influence the industry positively.