The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Jun. 14, 2002
Kurt K. Christenson, Minnetonka, MN (US);
Thomas J. Wagener, Shorewood, MN (US);
Neil Bruce Rosengren, Plymouth, MN (US);
Brent D. Schwab, Burnsville, MN (US);
FSI International, Inc., Chaska, MN (US);
Abstract
A process for etching high dielectric constant (high-k) films (e.g., Zr Si O , Hf Si O , Zr Hf O , Hf Al O , and Zr Al O ) more rapidly than coexisting SiO , polysilicon, silicon and/or other films is disclosed. The process comprises contacting the films with an aqueous solution comprising a fluoride containing species at a concentration sufficiently dilute to achieve a desired selective etch of the high-k film. The etching solution is preferably used above ambient temperature to further increase the etch selectivity of the high-k films relative to coexisting SiO and/or other films. The etch rate of the solution can also be adjusted by controlling the pH of the etching solution, e.g., by the addition of other acids or bases to the solution (for example, HCl or NH OH).