Negar Naghavi

Title: Negar Naghavi: Innovator in Semiconductor Technology

Introduction

Negar Naghavi is a prominent inventor based in Paris, France. She has made significant contributions to the field of semiconductor technology, particularly in photovoltaic applications. Her innovative work has led to the development of a unique method for producing thin layers of semiconductor alloys.

Latest Patents

Negar Naghavi holds a patent for her invention titled "Sulfurization and selenization of electrodeposited CIGS films by thermal annealing." This invention relates to a method for the production of thin layers of semiconductor alloys of the I-III-VI type, which includes sulfur for photovoltaic applications. The process involves depositing a heterostructure on a substrate, which comprises a thin layer of precursor I-III-VI that is essentially amorphous, along with a thin layer that includes sulfur. The heterostructure is then annealed to promote the diffusion of sulfur into the precursor layer, facilitating the at least partial crystallization of the I-III-VI alloy with a stoichiometry that includes sulfur. Additionally, a layer of selenium may be deposited to assist in the recrystallization processes.

Career Highlights

Throughout her career, Negar Naghavi has worked with notable organizations, including Electricité de France and the Centre National de la Recherche Scientifique. Her experience in these institutions has allowed her to refine her expertise in semiconductor technology and contribute to groundbreaking research.

Collaborations

Negar has collaborated with esteemed colleagues such as Stéphane Taunier and Daniel Lincot. These partnerships have further enhanced her research and development efforts in the field.

Conclusion

Negar Naghavi is a trailblazer in the semiconductor industry, with her innovative patent and collaborative efforts paving the way for advancements in photovoltaic technology. Her work exemplifies the impact of dedicated inventors in shaping the future of energy solutions.