The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2014
Filed:
May. 19, 2006
Stéphane Taunier, San Diego, CA (US);
Daniel Lincot, Antony, FR;
Jean-francois Guillemoles, Paris, FR;
Negar Naghavi, Paris, FR;
Denis Guimard, Paris, FR;
Stéphane Taunier, San Diego, CA (US);
Daniel Lincot, Antony, FR;
Jean-Francois Guillemoles, Paris, FR;
Negar Naghavi, Paris, FR;
Denis Guimard, Paris, FR;
Electricite de France, Paris, FR;
Centre National de la Recherche Scientifique-CNRS, Paris, FR;
Abstract
The invention relates to a method for production of thin layers of semiconductor alloys of the I-III-VItype, including sulphur, for photovoltaic applications, whereby a heterostructure is firstly deposited on a substrate comprising a thin layer of precursor I-III-VIwhich is essentially amorphous and a thin layer, including at least some sulphur, the heterostructure is then annealed to promote the diffusion of the sulphur into the precursor layer and the at least partial crystallization of the I-III-VIalloy of the precursor layer with a stoichiometry which hence includes sulphur. A layer of selenium may also be deposited to assist the recrystallization processes or annealing.