Centre National De La Recherche Scientifique

Electricite De France

Paris Sciences Et Lettres-quartier Latin

Negar Naghavi

Daniel Lincot

Denis Guimard

Jean-François Guillemoles

Stéphane Taunier

Nicolas Loones

Thibaud Hildebrandt

Zacharie Jehl

Nathanëlle Schneider

Serena Gallanti

Stèphane Taunier

The invention relates to a method for production of thin layers of semiconductor alloys of the I-III-VItype, including sulphur, for photovoltaic applications, whereby a heterostructure is firstly deposited on a substrate comprising a thin layer of precursor I-III-VIwhich is essentially amorphous and a thin layer, including at least some sulphur, the heterostructure is then annealed to promote the diffusion of the sulphur into the precursor layer and the at least partial crystallization of the I-III-VIalloy of the precursor layer with a stoichiometry which hence includes sulphur. A layer of selenium may also be deposited to assist the recrystallization processes or annealing.

Sulfurization and selenization of electrodeposited CIGS films by thermal annealing

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Negar Naghavi