Kiyosu, Japan

Naoyuki Ishihara

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Fujimi Incorporated. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naoyuki Ishihara. Retrieved from https://idiyas.com/inventor/naoyuki-ishihara-bbvf0j1r

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Naoyuki Ishihara: Innovator in Semiconductor Technology

Introduction

Naoyuki Ishihara is a prominent inventor based in Kiyosu, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to wetting agents and polishing compositions.

Latest Patents

Ishihara holds a patent for a wetting agent for semiconductors, as well as a polishing composition and method that employs it. This invention aims to improve the wettability of semiconductor substrate surfaces and significantly reduce microdefects, such as particle attachments. The wetting agent comprises a water-soluble polymer compound with low viscosity and water. Notably, a 0.3 wt % aqueous solution of the polymer compound has a viscosity of less than 10 mPa·s at 25°C.

Career Highlights

Naoyuki Ishihara is associated with Fujimi Incorporated, a company known for its advancements in semiconductor materials and technologies. His work has been instrumental in enhancing the performance and reliability of semiconductor devices.

Collaborations

Ishihara has collaborated with notable colleagues, including Hitoshi Morinaga and Shuhei Takahashi, to further advance the field of semiconductor technology.

Conclusion

Naoyuki Ishihara's contributions to semiconductor technology through his innovative patent demonstrate his commitment to improving the industry. His work continues to influence advancements in the field, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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