Tsukuba, Japan

Naoto Noda

USPTO Granted Patents = 3 

Average Co-Inventor Count = 4.4

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017-2025

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3 patents (USPTO):Explore Patents

Title: Naoto Noda: Innovator in Si-Containing Film Technologies

Introduction

Naoto Noda is a prominent inventor based in Tsukuba, Japan. He has made significant contributions to the field of materials science, particularly in the development of methods for depositing silicon-containing films. With a total of three patents to his name, Noda's work is at the forefront of innovation in this area.

Latest Patents

Noda's latest patents include groundbreaking methods for forming silicon-containing films on substrates. One notable patent describes precursors and processes for deposition of silicon-containing films using atomic layer deposition (ALD) at temperatures of 550° C. or higher. This method involves heating the substrate and exposing it to a vapor containing a silicon precursor, which allows for the formation of high-quality films. Another significant patent focuses on ultra-low temperature ALD to create silicon nitride films using trisilylamine at temperatures below 250° C. These advancements are crucial for various applications in electronics and materials engineering.

Career Highlights

Noda is currently employed at L'air Liquide Société Anonyme Pour L'etude Et L'exploitation Des Procédés Georges Claude. His work at this esteemed company has allowed him to explore innovative techniques in film deposition, contributing to the advancement of semiconductor technologies.

Collaborations

Throughout his career, Noda has collaborated with notable colleagues, including Jean-Marc Girard and Ivan Oshchepkov. These partnerships have fostered a collaborative environment that enhances the research and development of new technologies.

Conclusion

Naoto Noda's contributions to the field of silicon-containing films exemplify the spirit of innovation in materials science. His patents and ongoing research continue to influence the industry and pave the way for future advancements.

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