L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Naoto Noda

Jean-Marc Girard

Ivan Oshchepkov

Julien Gatineau

Kazutaka Yanagita

Zhiwen Wan

Shingo Okubo

Changhee Ko

Naohisa Nakagawa

Takio Kizu

Methods for forming a Si-containing film on a substrate comprise heating the substrate to a temperature higher than S50° C., exposing the substrate to a vapor including a Si-containing film forming composition containing a Si-containing precursor having the formula: SiRR(NH—SiR'), wherein x=2, 3, 4; y=0, 1, 2, Rand Reach are independently selected from H, a halogen (Cl, Br, I), an C-Calkyl, an isocyanate, a C-Calkoxide, or an —NRRgroup in which Rand Reach are independently selected from H, a C-Calkyl, provided that if R═H, R>C; each R′ is independently selected from H, a halogen (Cl, Br, I), or a C-Calkyl, and depositing the Si-containing precursor onto the substrate to form the Si-containing film on the substrate through an ALD process. The Si-containing precursor may be selected from SiH(NH—Si(CH)), SiHCl(NH—Si(CH)), SiCl(NH—Si(CH)), SiH(NH—Si(CH)), SiCl(NH—Si(CH)), or Si(NH—Si(CH)).

Precursors and processes for deposition of Si-containing films using ALD at temperature of 550° C. or higher

Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250&#xb0; C.

Ultra-low temperature ALD to form high-quality Si-containing film

Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

Vapor deposition of silicon-containing films using penta-substituted disilanes

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Tsukuba, Japan

Naoto Noda