Precursors and processes for deposition of si-containing films using ald at temperature of 550° c. or higher

Abstract

Methods for forming a Si-containing film on a substrate comprise heating the substrate to a temperature higher than S50° C., exposing the substrate to a vapor including a Si-containing film forming composition containing a Si-containing precursor having the formula: SiRR(NH—SiR'), wherein x=2, 3, 4; y=0, 1, 2, Rand Reach are independently selected from H, a halogen (Cl, Br, I), an C-Calkyl, an isocyanate, a C-Calkoxide, or an —NRRgroup in which Rand Reach are independently selected from H, a C-Calkyl, provided that if R═H, R>C; each R′ is independently selected from H, a halogen (Cl, Br, I), or a C-Calkyl, and depositing the Si-containing precursor onto the substrate to form the Si-containing film on the substrate through an ALD process. The Si-containing precursor may be selected from SiH(NH—Si(CH)), SiHCl(NH—Si(CH)), SiCl(NH—Si(CH)), SiH(NH—Si(CH)), SiCl(NH—Si(CH)), or Si(NH—Si(CH)).