Hitachinaka, Japan

Naonori Wada

USPTO Granted Patents = 5 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2006-2011

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5 patents (USPTO):Explore Patents

Title: Naonori Wada: Innovator in Semiconductor Technology

Introduction

Naonori Wada is a prominent inventor based in Hitachinaka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on innovative methods for manufacturing semiconductor integrated circuit devices.

Latest Patents

One of Naonori Wada's latest patents involves a method of manufacturing a semiconductor integrated circuit device. This method includes the formation of five trenches buried with an intermediate conductive layer for connecting transfer MISFETs and driving MISFETs with vertical MISFETs formed above them. The process utilizes twice etching with first and second photoresist films as a mask to achieve high accuracy in trench formation. Notably, this technique allows for the reduction of distances between trenches to be smaller than the resolution limit for exposure light, enhancing the efficiency of memory cells.

Career Highlights

Throughout his career, Naonori Wada has worked with notable companies such as Renesas Technology Corporation and Renesas Electronics Corporation. His experience in these organizations has contributed to his expertise in semiconductor manufacturing processes.

Collaborations

Naonori Wada has collaborated with esteemed colleagues, including Hiraku Chakihara and Mitsuhiro Noguchi. These partnerships have furthered advancements in semiconductor technology and innovation.

Conclusion

Naonori Wada's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices.

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