The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2010
Filed:
May. 05, 2009
Hiraku Chakihara, Hitachinaka, JP;
Mitsuhiro Noguchi, Sagamihara, JP;
Masahiro Tadokoro, Mita, JP;
Naonori Wada, Hitachinaka, JP;
Akio Nishida, Takarazuka, JP;
Hiraku Chakihara, Hitachinaka, JP;
Mitsuhiro Noguchi, Sagamihara, JP;
Masahiro Tadokoro, Mita, JP;
Naonori Wada, Hitachinaka, JP;
Akio Nishida, Takarazuka, JP;
Renesas Electronics Corp., Kanagawa, JP;
Abstract
In forming five trenches buried with an intermediate conductive layer for connecting transfer MISFETs and driving MISFETs with vertical MISFETs formed thereover, in which the second and third trenches, and the first, fourth, and fifth trenches are formed separately by twice etching using first and second photoresist films as a mask. Since all the trenches can be formed at a good accuracy even in a case where the shortest distance between the first trench and the second or third trench, and the shortest distance between the second or third trench and the fourth trench is smaller than the resolution limit for the exposure light, the distance between each of the five trenches arranged in one identical memory cell can be reduced to be smaller than resolution limit for the exposure light.