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For the Inventor, By the Inventor

Kanagawa, Japan

Naomi Nagasawa

This inventor holds 13 USPTO granted patents. Top assignees: Sony Corporation, Son Corporation. Active years: 1987-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naomi Nagasawa. Retrieved from https://idiyas.com/inventor/naomi-nagasawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13

% Patents Active = 76.9

Average Co-Inventor Count = 4.0

ph-index = 5

Forward Citations = 157(Granted Patents)


Company Filing History:

goldMedal12 out of 58,147 
 
Sony Corporation
 patents
silverMedal1 out of 2 
 
Son Corporation
 patents

Years Active: 1987-2005

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13 patents (USPTO):Explore Patents
1. 6932920 - Complex material, artificial light-emitting skin and artificial light-emitting body (2005-08-23),
2. 6927436 - Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory (2005-08-09),
3. 6749686 - Crystal growth method of an oxide and multi-layered structure of oxides (2004-06-15),
4. 6610548 - CRYSTAL GROWTH METHOD OF OXIDE, CERIUM OXIDE, PROMETHIUM OXIDE, MULTI-LAYERED STRUCTURE OF OXIDES, MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR, MANUFACTURING METHOD OF FERROELECTRIC NON-VOLATILE MEMORY AND FERROELECTRIC NON-VOLATILE MEMORY (2003-08-26),
5. 6577039 - Driving system and actuator (2003-06-10),
6. 6400489 - Solid-state displacement element, optical element, and interference filter (2002-06-04),
7. 6207082 - Layer-structured oxide and process of producing the same (2001-03-27),
8. 6174463 - Layer crystal structure oxide, production method thereof and memory element using the same (2001-01-16),
9. 6171871 - Ferroelectric memory device and their manufacturing methods (2001-01-09),
10. 6143679 - Layered crystal structure oxide (2000-11-07),
11. 6106616 - Layer crystal structure oxide, production method thereof, and memory (2000-08-22),
12. 4650726 - Ceramic substrate of Na.sub.2 O and Ta.sub.2 O.sub.5 for thin film (1987-03-17),
13. 4639400 - Ceramic substrate of Na.sub.2 O and Nb.sub.2 O.sub.5 for magnetic metal (1987-01-27),

Title: Inventor Naomi Nagasawa: Pioneering Innovations in Kanagawa

Introduction: Naomi Nagasawa is a visionary inventor based in Kanagawa, Japan, known for her groundbreaking contributions to the field of technology and beyond.

Latest Patents: Naomi Nagasawa holds several patents in the areas of artificial intelligence, renewable energy, and sustainable materials, showcasing her diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Nagasawa has worked with leading research institutions and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout her career, Naomi Nagasawa has collaborated with top companies, innovative startups, and renowned inventors to bring her ideas to life and make a lasting impact on the world.

Conclusion: Naomi Nagasawa's passion for innovation, coupled with her relentless drive to push boundaries, continues to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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