The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
May. 05, 2003
Takaaki Ami, Kanagawa, JP;
Yuichi Ishida, Kanagawa, JP;
Naomi Nagasawa, Kanagawa, JP;
Masayuki Suzuki, Kanagawa, JP;
Akio Machida, Kanagawa, JP;
Takaaki Ami, Kanagawa, JP;
Yuichi Ishida, Kanagawa, JP;
Naomi Nagasawa, Kanagawa, JP;
Masayuki Suzuki, Kanagawa, JP;
Akio Machida, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeOfilm, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.