The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2000
Filed:
Oct. 03, 1997
Naomi Nagasawa, Kanagawa, JP;
Akio Machida, Kanagawa, JP;
Takaaki Ami, Kanagawa, JP;
Masayuki Suzuki, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Provided are a layered crystal structure oxide showing ferroelectricity or paraelectricity and a process for easily producing the same. A raw material containing Bi.sub.2 O.sub.3 as a flux is heated up to 1330.degree. C. or higher and 1450.degree. C. or lower at a suitable temperature-elevating rate (heating step); the raw material is maintained at this heating temperature for prescribed time (constant temperature step); and then, it is slowly cooled down to 800.degree. C. or higher and 1300.degree. C. or lower at a rate of 1.degree. C./hour or more and 20.degree. C./hour or less (slow cooling step). This makes it possible to evaporate the flux and take out directly Bi.sub.2 SrTa.sub.2 O.sub.9. In this Bi.sub.2 SrTa.sub.2 O.sub.9, Bi is partially substituted with Sr, and oxygen is selectively deficient or disordered. Or, Bi and O in the fluorite layer are relatively displaced each other in the polarization direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile