This inventor holds 1 USPTO granted patent. Top assignee: Towa Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Naomi Fujiwara: Semiconductor Manufacturing Innovation.
Introduction
Naomi Fujiwara is an inventor associated with Kyoto, Japan, and Towa Corporation. Her patent work addresses a manufacturing method designed to protect resin material during laser processing of semiconductor lead frames.
Latest Patents
Fujiwara is credited with 1 patent: “Semiconductor Device Manufacturing Method and Lead Frame.” The invention describes a lead frame with a region on its back surface that receives laser irradiation during two scanning steps. In the cutting process, the corners of each unit resin-molded product overlap this region. The arrangement helps prevent laser light from reaching corresponding portions of resin on the front surface, reducing the risk of unwanted laser exposure during manufacturing.
Career Highlights
Fujiwara’s listed invention focuses on the interaction between laser scanning, lead-frame design, and resin molding. This work reflects an effort to address a specific manufacturing challenge in semiconductor device production.
Collaborations
Fujiwara’s listed coworkers include Syuho Hanasaka and Yudai Takamori. The patent is associated with Towa Corporation.
Conclusion
Naomi Fujiwara’s patent presents a targeted approach to controlling laser exposure during semiconductor lead-frame processing, with the aim of protecting resin material in the manufacturing process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile