Chiba, Japan

Naoki Oyanagi

USPTO Granted Patents = 5 

Average Co-Inventor Count = 2.5

ph-index = 2

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 2002-2011

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5 patents (USPTO):Explore Patents

Title: **Naoki Oyanagi: Innovator in Silicon Carbide Crystal Growth**

Introduction

Naoki Oyanagi is a prominent inventor based in Chiba, Japan, recognized for his significant contributions to the field of silicon carbide (SiC) crystal growth. With a total of five patents to his name, Oyanagi has developed innovative methods that enhance the efficiency of producing high-quality silicon carbide single crystals.

Latest Patents

Oyanagi's latest patents include a sophisticated method for producing silicon carbide single crystals. This method involves several intricate steps, starting with the growth of a first SiC single crystal on a first seed crystal. The first crystal is then oriented in a direction parallel or oblique to the initial growth, after which it is cut to obtain a second seed crystal. This process is repeated to produce a third SiC single crystal, ultimately achieving an SiC single crystal with an exposed {0001} crystal face. His methodologies not only facilitate efficient enlargement of the crystals but also preserve their crystallinity. Another significant patent focuses on the growth process of silicon carbide seed crystals, utilizing vapor gas from silicon carbide as a raw material to promote growth on the seed crystal.

Career Highlights

Naoki Oyanagi has made notable advancements in the semiconductor industry, primarily during his tenure with Showa Denko K.K. and Showa Denko Kabushiki Kaisha. His work has been instrumental in improving the quality of silicon carbide crystals, which are essential in various high-temperature and high-voltage applications, such as power electronics and high-efficiency devices.

Collaborations

Throughout his career, Oyanagi has collaborated with esteemed colleagues in the field, including Nobuyuki Nagato and Yasuyuki Sakaguchi. These collaborations have fostered a rich exchange of ideas and innovations, further propelling advancements in silicon carbide technology.

Conclusion

Naoki Oyanagi's work in the realm of silicon carbide single crystal production stands as a testament to his inventive spirit and dedication to advancing material science. With his innovative methods and collaborative efforts, he continues to influence the semiconductor industry and pave the way for future innovations in crystal growth techniques.

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