The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2008

Filed:

Jun. 15, 2004
Applicant:

Naoki Oyanagi, Chiba, JP;

Inventor:

Naoki Oyanagi, Chiba, JP;

Assignee:

Showa Denko K.K., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for producing a single crystal includes supplying a vapor gas from silicon carbide as a raw material to a seed crystal formed of a silicon carbide single crystal to grow the seed crystal. The seed crystal is disposed in a part of crystal growth, with a crystal face of the seed crystal inclined relative to a (0001) plane or (000-1) plane, thereby making crystal growth.


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