The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Sep. 18, 2003
Yasuyuki Sakaguchi, Chiba, JP;
Atsushi Takagi, Chiba, JP;
Naoki Oyanagi, Chiba, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
A growth crucible () for depositing on a seed crystal substrate () a silicon carbide single crystal () using a sublimate gas of a silicon carbide raw material () is disposed inside of an outer crucible (). During the course of silicon carbide single crystal, a silicon raw material () is continuously fed from outside into a space between the growth crucible and the outer crucible for the purpose of vaporizing the silicon raw material. An atmosphere gas surrounding the growth crucible is constituted of a silicon gas. The pressure of the atmosphere silicon gas is controlled to suppress a variation in the composition of the sublimate gas within the growth crucible to thereby grow a large-sized silicon carbide single crystal with few crystal defects on the seed crystal substrate reliably at a high growth rate.