Showa Denko K.k.

Other

Showa Denko Kabushiki Kaisha

Naoki Oyanagi

Nobuyuki Nagato

Yasuyuki Sakaguchi

Hitoshi Ohmori

Yutaka Yamagata

Kotaro Yano

Kunio Komaki

Nobuhide Itoh

Shigehiro Nishino

Isamu Yamamoto

Tomohiro Syounai

Atsushi Takagi

A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal, disposing the first SiC single crystal grown on the first seed crystal in a direction parallel or oblique to the first direction of growth and cutting the disposed first SiC single crystal in a direction of a major axis in a cross section perpendicular to the first direction of growth to obtain a second seed crystal, using the second seed crystal to grow thereon in a second direction of growth a second SiC single crystal to a thickness greater than a length of the major axis in the cross section, disposing the second SiC single crystal grown on the second seed crystal in a direction parallel or oblique to the second direction of growth and cutting the disposed second SiC single crystal in a direction of a major axis in a cross section perpendicular to the second direction of growth to obtain a third seed crystal, using the third seed crystal to grow thereon a third SiC single crystal, and cutting the third SiC single crystal grown on the third seed crystal in such a manner as to expose a {0001} crystal face, thereby obtaining an SiC single crystal. The method enables the crystal to be enlarged efficiently without impairing crystallinity.

Method for producing silicon carbide single crystal

A method for producing a single crystal includes supplying a vapor gas from silicon carbide as a raw material to a seed crystal formed of a silicon carbide single crystal to grow the seed crystal. The seed crystal is disposed in a part of crystal growth, with a crystal face of the seed crystal inclined relative to a (0001) plane or (000-1) plane, thereby making crystal growth.

Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal

A growth crucible () for depositing on a seed crystal substrate () a silicon carbide single crystal () using a sublimate gas of a silicon carbide raw material () is disposed inside of an outer crucible (). During the course of silicon carbide single crystal, a silicon raw material () is continuously fed from outside into a space between the growth crucible and the outer crucible for the purpose of vaporizing the silicon raw material. An atmosphere gas surrounding the growth crucible is constituted of a silicon gas. The pressure of the atmosphere silicon gas is controlled to suppress a variation in the composition of the sublimate gas within the growth crucible to thereby grow a large-sized silicon carbide single crystal with few crystal defects on the seed crystal substrate reliably at a high growth rate.

Silicon carbide single crystal and method and apparatus for producing the same

The present invention comprises a metal bond grind stone having a flat plate portion and a tapered portion ; an electrode opposed to the metal bond grind stone with a gap therebetween; voltage applying means for applying a direct-current pulse voltage between the metal bond grind stone and the electrode; conductive liquid supplying means for supplying a conductive liquid between the metal bond grind stone and the electrode; and grind stone moving means for moving the metal bond grind stone in a direction orthogonal to the shaft center thereof, and an ingot of a single crystal SiC is thereby cut at the tapered portion of the metal bond grind stone and the cut surface is then specular-worked at the flat plate portion

Method and apparatus for cutting and grinding single crystal SiC

A silicon carbide single crystal is produced by allowing a vapor evaporated from a silicon raw material to pass through a heated carbon member and then reach a seed crystal substrate on which a silicon carbide single crystal grows. For this production, an apparatus is used, which has a reaction tube, a heating device and a graphite crucible, wherein the lower part of the crucible constitutes a silicon raw material-charging part; a seed crystal substrate is situated at the top of the crucible; and a carbon member, through which the vapor evaporated from a silicon raw material in capable of passing, is disposed intermediately between the silicon raw material-charging part and the seed crystal. As the carbon member, a porous carbon structure, a carbon plate having a plurality of through holes and a carbon particle-packed layer can be mentioned.

Method and apparatus for producing silicon carbide single crystal

Growing community of inventors

Chiba, Japan

Naoki Oyanagi