Dresden, Germany

Nandha Kumar Subramani

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Globalfoundries U.S. Inc.. Active years: 2026.

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Nandha Kumar Subramani: Innovator in Silicon-Controlled Rectifiers

Introduction

Nandha Kumar Subramani is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the area of electrostatic discharge protection.

Latest Patents

Nandha Kumar Subramani holds a patent for "Silicon-controlled rectifiers for electrostatic discharge protection." This patent describes structures for a silicon-controlled rectifier and methods of forming such structures. The design includes a first well and a second well in a semiconductor substrate, with a first terminal featuring a first doped region in the first well and a second terminal with a second doped region in the second well. The first well, the second well, and the first doped region possess a first conductivity type, while the second doped region has a second conductivity type that is opposite to the first. Additionally, the structure incorporates a deep well in the semiconductor substrate, which also has the second conductivity type.

Career Highlights

Nandha Kumar Subramani is currently employed at GlobalFoundries U.S. Inc., where he continues to innovate in semiconductor technologies. His work has been instrumental in advancing the capabilities of silicon-controlled rectifiers.

Collaborations

Throughout his career, Nandha has collaborated with talented individuals such as Vishal Ganesan and Prantik Mahajan. These collaborations have contributed to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Nandha Kumar Subramani is a distinguished inventor whose work in silicon-controlled rectifiers has made a significant impact in the field of electrostatic discharge protection. His contributions continue to influence advancements in semiconductor technology.

Profile summary based on public USPTO records.
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