The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Jul. 05, 2022
Globalfoundries U.s. Inc., Malta, NY (US);
Vishal Ganesan, Dresden, DE;
Prantik Mahajan, Dresden, DE;
Nandha Kumar Subramani, Dresden, DE;
Souvick Mitra, Essex Junction, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Structures for a silicon-controlled rectifier and methods of forming a structure for a silicon-controlled rectifier. The structure comprises a first well and a second well in a semiconductor substrate, a first terminal including a first doped region in the first well, and a second terminal including a second doped region in the second well. The first well, the second well and the first doped region have a first conductivity type, and the second doped region has a second conductivity type opposite to the first conductivity type. The structure further comprises a deep well in the semiconductor substrate. The deep well has the second conductivity type, the first well is positioned in a vertical direction between the deep well and the top surface of the semiconductor substrate, and the second well is positioned in the vertical direction between the deep well and the top surface of the semiconductor substrate.