This inventor holds 2 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 2020.
Company Filing History:
Years Active: 2020
Title: Namiko Hagane: Innovator in Semiconductor Technology
Introduction
Namiko Hagane is a prominent inventor based in Fukushima, Japan. She has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase her innovative spirit and technical expertise.
Latest Patents
One of her latest patents is the "Source down power FET with integrated temperature sensor." This device features an epitaxial layer situated over a semiconductor substrate, with both components having a first conductivity type. The field-effect transistor (FET) includes source and drain regions of an opposite second conductivity type, positioned within the epitaxial layer. Additionally, a diode is integrated, comprising first and second p-type regions along with an n-type region, all within the epitaxial layer. A conductive plug connects the first p-type region to the source region via the substrate. Another notable patent is also titled "Source down power FET with integrated temperature sensor." This electronic device incorporates a first semiconductor die with a first FET, where the drain is linked to a switching node, the source to a reference node, and the gate to a first switch control node. It also includes a diode-connected bipolar transistor that forms a temperature diode adjacent to the first FET.
Career Highlights
Namiko Hagane is currently employed at Texas Instruments Corporation, where she continues to push the boundaries of semiconductor innovation. Her work has been instrumental in developing advanced electronic devices that enhance performance and efficiency.
Collaborations
Throughout her career, Namiko has collaborated with talented individuals such as Haian Lin and Frank Alexander Baiocchi. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.
Conclusion
Namiko Hagane is a remarkable inventor whose contributions to semiconductor technology are noteworthy. Her innovative patents and collaborations reflect her dedication to advancing the field.