The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Mar. 11, 2019
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Haian Lin, Bethlehem, PA (US);

Frank Alexander Baiocchi, Allentown, PA (US);

Masahiko Higashi, Fukushima, JP;

Namiko Hagane, Fukushima, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/00 (2006.01); H02M 3/335 (2006.01); H03K 17/14 (2006.01); H01L 25/16 (2006.01); H01L 21/8249 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H03K 17/145 (2013.01); H01L 21/8249 (2013.01); H01L 25/16 (2013.01); H01L 27/0623 (2013.01); H01L 27/0629 (2013.01);
Abstract

An electronic device includes a first semiconductor die with a first FET having a drain connected to a switching node, a source connected to a reference node, and a gate connected to a first switch control node. The first die also includes a diode-connected bipolar transistor that forms a temperature diode next to the first FET. The temperature diode includes a cathode connected to the reference node, and an anode connected to a bias node. The electronic device also includes a second semiconductor die with a second FET, and a package structure that encloses the first and second semiconductor dies.


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