Nai Jen Yeh

Title: Innovations of Nai Jen Yeh

Introduction

Nai Jen Yeh is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of power MOSFET devices. With a total of 3 patents to his name, his work has had a considerable impact on the industry.

Latest Patents

Nai Jen Yeh's latest patents include a low resistance, high breakdown voltage power MOSFET. This invention features a metal oxide semiconductor field effect transistor power device that utilizes a lightly doped silicon substrate. The design incorporates a source region and a drain region, with at least one field implanted island region formed along the surface of the substrate between these regions. Additionally, a field oxide region is formed above the field implanted region, along with a dielectric layer and a gate electrode. Self-aligned source and drain regions are implanted into the device, with external electrodes connected for functionality. Another patent focuses on the method of manufacturing this low resistance, high breakdown voltage power device, emphasizing similar structural elements and configurations.

Career Highlights

Nai Jen Yeh is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to further his research and development efforts in innovative semiconductor technologies.

Collaborations

Some of his notable coworkers include Su Lu and Ta-chi Kuo, who have collaborated with him on various projects within the company.

Conclusion

Nai Jen Yeh's contributions to semiconductor technology through his patents and work at United Microelectronics Corporation highlight his role as an influential inventor in the field. His innovations continue to shape the future of power MOSFET devices.