The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1999
Filed:
Jul. 28, 1997
Ching-Hsiang Hsu, Hsin-Chu, TW;
Ta-Chi Kuo, Hsin-Chu, TW;
Nai Jen Yeh, Hsin-Chu, TW;
Su Lu, Tadyuan, TW;
Abstract
A metal oxide semiconductor field effect transistor power device with a lightly doped silicon substrate includes a source region and a drain region. At least one field implanted island region is formed along the surface of the substrate between the source and drain regions with a field oxide region formed above the field implanted region, a dielectric layer and a gate electrode formed over the substrate, and self-aligned source and drain regions implanted into the device with external electrodes connected thereto.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile