Jiangsu, China

Na Bai



Average Co-Inventor Count = 7.1

ph-index = 2

Forward Citations = 20(Granted Patents)


Location History:

  • Wuxi, CN (2014)
  • Jiangsu, CN (2013 - 2016)

Company Filing History:


Years Active: 2013-2016

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5 patents (USPTO):Explore Patents

Title: Exploring the Innovations of Inventor Na Bai in Jiangsu

Introduction

Na Bai, an accomplished inventor based in Jiangsu, China, has made significant contributions to the field of electronics, particularly in memory circuit design. With a total of five patents to his name, Na Bai has developed cutting-edge technologies aimed at enhancing the performance and reliability of sub-threshold SRAM memory cells.

Latest Patents

Na Bai's latest innovations include two key patents:

1. **Circuit for Enhancing Robustness of Sub-Threshold SRAM Memory Cell**

This circuit acts as an auxiliary to improve the process robustness of sub-threshold SRAM memory cells. It is designed to modify the substrate voltage of PMOS transistors in response to variations in threshold voltage, effectively improving noise margins and overall performance during operational fluctuations.

2. **Noise Current Compensation Circuit**

This patent introduces a compensation circuit equipped with control terminals that dictate its operational states. By dynamically managing the discharge rates of signals, it mitigates the detrimental effects of noise currents on circuit integrity, thereby ensuring accurate signal identification in SRAM applications.

Career Highlights

Na Bai is associated with Southeast University, where his work in the field of electronic engineering has gained recognition. His innovative approach to circuit design, particularly in the context of memory technology, positions him as a leading figure in research and development.

Collaborations

Throughout his career, Na Bai has collaborated with notable peers such as Longxing Shi and Jun Yang. This collaboration has fostered a rich environment for knowledge exchange and innovation, enhancing the impact of his inventions.

Conclusion

Na Bai's contributions to the development of advanced memory circuit technologies highlight his role as an influential inventor in the field. His focus on improving the robustness and functionality of SRAM memory cells demonstrates a commitment to solving critical challenges in electronics. With his ongoing research and collaborative efforts, Na Bai is poised to continue making strides in the innovative landscape of electronic engineering.

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