Mu-Lin Li

Title: Mu-Lin Li: Inventor in Semiconductor Memory Technology.

Introduction

Mu-Lin Li is an inventor associated with Taichung City, Taiwan, and Winbond Electronics Corporation. Her patent work concerns semiconductor isolation structures and memory devices.

Latest Patents

Li is credited with 1 patent. Her patent, “Isolation Structure and Memory Device,” describes an isolation material layer filling a trench in a substrate and a protection layer covering opposite edges of the isolation material. The protection layer extends across the trench boundaries and has etching selectivity relative to the isolation material, a design intended to support the structure’s fabrication and integration in a memory device.

Career Highlights

Li’s listed invention addresses a component of semiconductor memory technology: the isolation structure that separates regions within a substrate. The patent identifies her work in this area and her association with Winbond Electronics Corporation.

Collaborations

The available information connects Li’s patent and professional affiliation with Winbond Electronics Corporation. No additional collaborators are specified in the provided data.

Conclusion

Mu-Lin Li’s patent focuses on a protected trench-isolation design for memory devices, reflecting her contribution to semiconductor technology through her association with Winbond Electronics Corporation.