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For the Inventor, By the Inventor

Hsinchu, Taiwan

Mu-Jen Lai

This inventor holds 7 USPTO granted patents. Top assignees: Vtera Technology Inc., Vetra Technology, Inc., Other. Active years: 2002-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mu-Jen Lai. Retrieved from https://idiyas.com/inventor/mu-jen-lai-hctn5he9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 7

% Patents Active = 14.3

Average Co-Inventor Count = 2.5

ph-index = 4

Forward Citations = 111(Granted Patents)


Location History:

  • Chuagli City, Taoyuan Hsien, TW (2002)
  • Chuagli, TW (2004)
  • Jungli, TW (2004)
  • Hsinchu, TW (2004 - 2005)

Company Filing History:

goldMedal3 out of 3 
 
Vtera Technology Inc.
 patents
silverMedal2 out of 2 
 
Vetra Technology, Inc.
 patents
bronzeMedal2 out of 834,659 
Other
 patents

Years Active: 2002-2005

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7 patents (USPTO):Explore Patents
1. 6914315 - GaN-based heterostructure photodiode (2005-07-05),
2. 6835964 - GaN-based composition semiconductor light-emitting element and its window layer structure (2004-12-28),
3. 6828169 - Method of forming group-III nitride semiconductor layer on a light-emitting device (2004-12-07),
4. 6825498 - White light LED (2004-11-30),
5. 6815722 - Light-emitting device with reduced lattice mismatch (2004-11-09),
6. 6787828 - Optical-gate transistor and method of manufacturing the same (2004-09-07),
7. 6492661 - Light emitting semiconductor device having reflection layer structure (2002-12-10),

Title: Mu-Jen Lai: Innovator in GaN-based Technologies

Introduction

Mu-Jen Lai is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in GaN-based compositions. With a total of 7 patents to his name, Lai's work has advanced the capabilities of photodiodes and light-emitting elements.

Latest Patents

One of his latest patents is a GaN-based heterostructure photodiode. This invention comprises a P-type layer, an N-type layer, and an activity layer between them. The layers are made of GaN-based composition, with the activity layer doped with boron to modulate the band gap. This innovation increases the breakdown voltage and enhances the light-receiving ability, resulting in improved performance for light detection. Another notable patent is for a GaN-based composition semiconductor light-emitting element and its window layer structure. This invention includes a substrate with several epitaxy layers and a window layer, all composed of GaN-based materials. Boron atoms are doped in the window layer to increase the band gap and decrease the refractive index, which enhances the electric conductivity and reduces defect generation.

Career Highlights

Mu-Jen Lai has worked with Vtera Technology Inc., where he has applied his expertise in semiconductor technologies. His innovative work has positioned him as a key figure in the development of advanced light detection and emission technologies.

Collaborations

Lai has collaborated with notable coworkers, including Chiung-Yu Chang and Fen-Ren Chien, who have contributed to his research and development efforts.

Conclusion

Mu-Jen Lai's contributions to GaN-based technologies have significantly impacted the field of semiconductor innovation. His patents reflect a commitment to enhancing the performance of photodiodes and light-emitting elements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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