The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
May. 28, 2003
Mu-Jen Lai, Hsinchu, TW;
Chiung-Yu Chang, Hsinchu, TW;
Other;
Abstract
A GaN-based composition semiconductor light-emitting element and its window layer structure includes a substrate where several epitaxy layers are sequentially formed and a window layer formed on the epitaxy layers so as to construct a light-emitting element. Each of the epitaxy layers and the window layer is composed of GaN-based composition. Boron atoms are doped in the window layer so as to increase the band gap of the window layer and decrease the refractive index. By appropriately doping the boron atoms, the activity rate of the P-type will be increased so as to increase the electric conductivity. Furthermore, by increasing the thickness of the window layer, the probability of defect generation can be reduced.