The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Aug. 07, 2003
Terashima Kazutaka, Hsinchu, TW;
Shun-Hung Hsu, Hsinchu, TW;
Chiung-Yu Chang, Hsinchu, TW;
Mu-Jen Lai, Hsinchu, TW;
Vtera Technology Inc., Hsinchu, TW;
Abstract
The invention provides a method of manufacturing an optical-gate transistor. A BP buffer layer is formed on a silicone substrate first, and a first AIN layer is then formed for offsetting strain in the layers deposited on the first AIN layer. Subsequently, a GaN layer and an n-type AIN layer are successively deposited to form a hetero-junction at the interface. A selective epitaxy or anisotropic etching of a GaN-group material is conducted to form a prism-shaped, light-receiving layer with a cubic lattice. The prism-shaped, light-receiving layer focuses incident light to induce electrons in the n-type AIN layer, which then form a high-speed 2DEG in the GaN layer, thereby increasing the power and sensitivity of the transistor being controlled by illumination.