Higashimurayama, Japan

Motoko Sawamura

This inventor holds 1 USPTO granted patent. Top assignees: Hitachi Hokkai Semiconductor Ltd., Hitachi Instruments Engineering Co., Ltd., Hitachi Ulsi Engineering Corp.. Active years: 1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Motoko Sawamura. Retrieved from https://idiyas.com/inventor/motoko-sawamura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 1997

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1 patent (USPTO):Explore Patents

Title: Motoko Sawamura and Semiconductor Memory Innovation.

Introduction

Motoko Sawamura is a woman inventor associated with Higashimurayama, Japan. Her recorded patent concerns the design of a semiconductor memory device, and her career information connects her with Hitachi, Ltd. and Hitachi Ulsi Engineering Corp.

Latest Patents

Sawamura is credited with 1 patent: “Semiconductor Memory Device Including Memory Cells Each Having an …”. The invention describes memory cells positioned where word lines and data lines intersect. Each cell combines a selecting transistor with an information-storage capacitor made of two connected capacitor components. The design places one component above the transistor’s control electrode and the other above an adjacent word line, with each component formed from common and storage electrodes separated by a dielectric film. The patent also describes stripe-pattern masks as a preferred way to pattern the storage electrodes.

Career Highlights

Sawamura’s listed company affiliations include Hitachi, Ltd. and Hitachi Ulsi Engineering Corp. Her patent reflects work on memory-cell structure and capacitor integration in semiconductor devices.

Collaborations

Her listed coworkers include Hiroki Soeda and Yasuhide Fujioka.

Conclusion

Motoko Sawamura’s recorded contribution is a semiconductor memory patent that details a two-component capacitor structure for memory cells.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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