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For the Inventor, By the Inventor

Yongin, South Korea

Moo-sung Kim

This inventor holds 25 USPTO granted patents and 4 published patent applications and 1 EPO patent, primarily in Flash Memory Technology. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2008-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Moo-sung Kim. Retrieved from https://idiyas.com/inventor/moo-sung-kim-tgmhb52v

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 25 

% Patents Active = 96.0


Average Co-Inventor Count = 1.8

ph-index = 8

Forward Citations = 223(Granted Patents)


Company Filing History:

goldMedal25 out of 138,671 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2008-2024

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Areas of Expertise:
Flash Memory Device
Programming Method
Nonvolatile Memory
Voltage Generator
Multi-Level Cell
NAND Flash
Bit Error Rate
Dummy Cells
Page Buffer
Trim Information
Operating Method
Current Compensation
25 patents (USPTO):Explore Patents
1. 12105585 - Method of equalizing bit error rates of memory device (2024-10-01),
2. 11126497 - Method of equalizing bit error rates of memory device (2021-09-21),
3. 11114160 - Memory device for compensating for current of off cells and operating method thereof (2021-09-07),
4. 10867672 - Resistive memory device and programming method of the same (2020-12-15),
5. 10825517 - Memory device for compensating for current of off cells and operating method thereof (2020-11-03),
6. 10490289 - Voltage generator for a nonvolatile memory device, and a method of operating the voltage generator (2019-11-26),
7. 8811086 - Flash memory device and programming method thereof (2014-08-19),
8. 8503231 - Multi-level cell flash memory device and read method (2013-08-06),
9. 8218365 - Flash memory device having dummy cells and method of operating the same (2012-07-10),
10. 8085589 - Flash memory device and program recovery method thereof (2011-12-27),
11. 8027208 - Flash memory device and programming method thereof (2011-09-27),
12. 7983079 - Nonvolatile semiconductor memory device and programming method thereof (2011-07-19),
13. 7889592 - Non-volatile memory device and a method of programming the same (2011-02-15),
14. 7839688 - Flash memory device with improved programming operation voltages (2010-11-23),
15. 7821836 - Flash memory device and method in which trim information is stored in memory cell array (2010-10-26),

Title: Moo-sung Kim: Innovator in Memory Device Technologies

Introduction

Moo-sung Kim, based in Yongin-si, South Korea, is a prominent inventor known for his significant contributions to memory device technologies. With an impressive portfolio of 25 patents, he has made notable advancements in the field, particularly in error correction methodologies.

Latest Patents

Among his latest innovations is a groundbreaking method designed to equalize bit error rates (BER) in memory devices. This innovative approach allows the selective execution of error correction code (ECC) interleaving operations based on the resistance distribution characteristics of memory cells. As data is written onto a memory cell array, the method divides an ECC sector into two sub-sectors: one targeting a high error rate memory area, and the other addressing a low error rate memory area. This ensures optimal data reliability and performance.

Career Highlights

Moo-sung Kim's career is closely tied to his role at Samsung Electronics Co., Ltd., where he has been instrumental in driving research and development in memory technologies. His expertise has led to key innovations that help maintain Samsung's competitive edge in the semiconductor industry.

Collaborations

Throughout his career, Kim has collaborated with talented colleagues, including Young-Ho Lim and Seung-Jae Lee. These partnerships have fostered a collaborative research environment that encourages innovative solutions to complex engineering challenges.

Conclusion

Moo-sung Kim's contributions to memory device technology showcase his commitment to innovation and excellence in engineering. His patented methodologies specifically aimed at improving memory device reliability highlight his role as a leader in the field. With ongoing advancements and collaboration with fellow experts, Kim continues to shape the future of memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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