The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Mar. 20, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Eun-chu Oh, Hwaseong-si, KR;
Moo-sung Kim, Yongin-si, KR;
Young-sik Kim, Suwon-si, KR;
Yong-jun Lee, Hwaseong-si, KR;
Jeong-ho Lee, Gwacheon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Provided is a bit error rate equalizing method of a memory device. The memory device selectively performs an error correction code (ECC) interleaving operation according to resistance distribution characteristics of memory cells, when writing a codeword including information data and a parity bit of the information data to a memory cell array. In the ECC interleaving operation according to one example, an ECC sector including information data is divided into a first ECC sub-sector and a second ECC sub-sector, the first ECC sub-sector is written to memory cells of a first memory area having a high bit error rate (BER), and the second ECC sub-sector is written to memory cells of a second memory area having a low BER.