The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Jul. 03, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yong-Sung Cho, Hwaseong-si, KR;

Moo-Sung Kim, Yongin-si, KR;

Seung-You Baek, Suwon-si, KR;

Jong-Min Baek, Hwaseong-si, KR;

Bong-Kil Jung, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/003 (2013.01); G11C 13/0004 (2013.01); G11C 13/0038 (2013.01); G11C 2013/0078 (2013.01);
Abstract

In some example embodiments, a program pulse is applied to a resistive memory cell and a plurality of post pulses are applied to the resistive memory cell at a time point after a relaxation time from a time point when application of the program pulse is finished, the plurality of post pulses having voltage levels that increase sequentially. Programming speed and/or performance of the resistive memory device may be enhanced by accelerating resistance drift of the resistive memory cell using the plurality of post pulses having the voltage levels that increase sequentially.


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