Troy, MI, United States of America

Mohshi Yang


Average Co-Inventor Count = 2.3

ph-index = 4

Forward Citations = 205(Granted Patents)


Company Filing History:


Years Active: 1987-1997

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4 patents (USPTO):Explore Patents

Title: Mohshi Yang: Innovator in Thin Film Transistor Technology

Introduction

Mohshi Yang is a notable inventor based in Troy, MI (US), recognized for his contributions to the field of thin film transistor (TFT) technology. With a total of four patents to his name, Yang has made significant advancements in the design and functionality of TFT arrays used in active matrix liquid crystal displays (AMLCDs).

Latest Patents

Yang's latest patents include a method of making an array of TFTs that feature reduced parasitic capacitance. This innovative design incorporates a centrally located round source electrode that is completely surrounded by a substantially annular or circular shaped drain electrode. The geometric design of the TFT allows for a thin film transistor that not only reduces parasitic capacitance but also decreases photosensitivity. The TFTs are strategically located at the intersections of gate and drain lines within the active matrix LCD array, which enhances the size of the pixel display openings.

Career Highlights

Throughout his career, Mohshi Yang has worked with prominent companies in the imaging technology sector, including Ois Optical Imaging Systems, Inc. and Ovonic Imaging Systems, Inc. His work has contributed to the advancement of display technologies, making them more efficient and effective.

Collaborations

Yang has collaborated with notable professionals in the field, including Willem Den Boer and Zvi Yaniv. These collaborations have further enriched his work and contributed to the development of innovative technologies.

Conclusion

Mohshi Yang's contributions to thin film transistor technology have had a lasting impact on the field of display technology. His innovative designs and patents continue to influence advancements in active matrix liquid crystal displays.

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