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Redwood City, CA, United States of America

Mohammad R Mirabedini

USPTO Granted Patents = 15

Average Co-Inventor Count = 2.4

ph-index = 6

Forward Citations = 120(Granted Patents)

Location History:

Daly City, CA (US) (2002 - 2003)
Redwood, CA (US) (2007)
Redwood City, CA (US) (2003 - 2011)

Company Filing History:

11 out of 3,715

Lsi Logic Corporation

Lsi Corporation

Years Active: 2002-2011

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15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8021955 - Method characterizing materials for a trench isolation structure having low trench parasitic capacitance (2011-09-20),

2. 7619294 - Shallow trench isolation structure with low trench parasitic capacitance (2009-11-17),

3. 7429749 - Strained-silicon for CMOS device using amorphous silicon deposition or silicon epitaxial growth (2008-09-30),

4. 7408227 - Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide (2008-08-05),

5. 7262119 - Method for incorporating germanium into a semiconductor wafer (2007-08-28),

6. 7148131 - Method for implanting ions in a semiconductor (2006-12-12),

7. 7138292 - Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide (2006-11-21),

8. 7129516 - Ion recoil implantation and enhanced carrier mobility in CMOS device (2006-10-31),

9. 7001823 - Method of manufacturing a shallow trench isolation structure with low trench parasitic capacitance (2006-02-21),

10. 6989331 - Hard mask removal (2006-01-24),

11. 6982229 - Ion recoil implantation and enhanced carrier mobility in CMOS device (2006-01-03),

12. 6930362 - Calcium doped polysilicon gate electrodes (2005-08-16),

13. 6562729 - Silicon nitride and silicon dioxide gate insulator transistors and method of forming same in a hybrid integrated circuit (2003-05-13),

14. 6544829 - Polysilicon gate salicidation (2003-04-08),

15. 6436845 - Silicon nitride and silicon dioxide gate insulator transistors and method of forming same in a hybrid integrated circuit (2002-08-20),

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