The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Oct. 30, 2003
Mohammad R. Mirabedini, Redwood City, CA (US);
Grace S. Sun, Sunnyvale, CA (US);
Sheldon Aronowitz, San Jose, CA (US);
Mohammad R. Mirabedini, Redwood City, CA (US);
Grace S. Sun, Sunnyvale, CA (US);
Sheldon Aronowitz, San Jose, CA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
A calcium doped polysilicon gate electrodes for PMOS containing semiconductor devices. The calcium doped PMOS gate electrodes reduce migration of the boron dopant out of the gate electrode, through the gate dielectric and into the substrate thereby reducing the boron penetration problem increasingly encountered with smaller device size regimes and their thinner gate dielectrics. Calcium doping of the gate electrode may be achieved by a variety of techniques. It is further believed that the calcium doping may improve the boron dopant activation in the gate electrode, thereby further improving performance.