Kawasaki, Japan

Mizuho Sato

This inventor holds 10 USPTO granted patents and 1 published patent application. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 2013-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mizuho Sato. Retrieved from https://idiyas.com/inventor/mizuho-sato

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 10 

% Patents Active = 90.0

Average Co-Inventor Count = 4.4

ph-index = 5

Forward Citations = 112(Granted Patents)


Location History:

  • Kanagawa, JP (2013)
  • Kawasaki, JP (2013 - 2017)

Company Filing History:


Years Active: 2013-2017

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10 patents (USPTO):Explore Patents

Title: Mizuho Sato: Innovator in Semiconductor Technology

Introduction

Mizuho Sato is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on improving the electric characteristics of semiconductor devices, particularly transistors.

Latest Patents

One of Sato's latest patents addresses a semiconductor device featuring a top-gate structure. In this design, the gate electrode layer overlaps with an oxide semiconductor layer, which forms a channel region with a gate insulating layer in between. The patent highlights the issue of hydrogen diffusion from the insulating layer into the oxide semiconductor layer, which can degrade the transistor's electric characteristics. To combat this, Sato proposes using an insulating layer with a hydrogen concentration of less than 6×10 atoms/cm, effectively preventing hydrogen diffusion and enhancing the device's performance.

Another notable patent involves a semiconductor device utilizing an oxide semiconductor. In this case, the insulating layer on the back channel side of the oxide semiconductor layer is designed to have a capacitance of less than or equal to 2×10 F/m. This innovation aims to reduce the adverse effects of interface states between the substrate and the base insulating layer, resulting in a semiconductor device with improved reliability and minimal fluctuation in electrical characteristics.

Career Highlights

Mizuho Sato is currently employed at Semiconductor Energy Laboratory Co., Ltd., where he continues to advance semiconductor technology. His expertise and innovative approach have positioned him as a key figure in the industry.

Collaborations

Sato has collaborated with notable colleagues, including Yuta Endo and Toshinari Sasaki. These partnerships have contributed to the development of cutting-edge semiconductor technologies.

Conclusion

Mizuho Sato's contributions to semiconductor technology through his innovative patents demonstrate his commitment to enhancing the performance and reliability of electronic devices. His work continues to influence the field and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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