The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
May. 19, 2014
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Yuta Endo, Atsugi, JP;
Toshinari Sasaki, Atsugi, JP;
Kosei Noda, Atsugi, JP;
Mizuho Sato, Kawasaki, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
Disclosed is a semiconductor device with a transistor in which an oxide semiconductor is used. An insulating layer on a back channel side of the oxide semiconductor layer has capacitance of lower than or equal to 2×10F/m. For example, in the case of a top-gate transistor, a base insulating layer has capacitance of lower than or equal to 2×10F/m, whereby the adverse effect of an interface state between the substrate and the base insulating layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile