Nishio, Japan

Mitutaka Katada


Average Co-Inventor Count = 4.4

ph-index = 5

Forward Citations = 103(Granted Patents)


Company Filing History:


Years Active: 1989-1995

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6 patents (USPTO):Explore Patents

Title: Mitutaka Katada: Innovator in Semiconductor Technology

Introduction

Mitutaka Katada is a prominent inventor based in Nishio, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is a semiconductor substrate structure designed for producing two isolated circuits. This innovative structure includes a semiconductor substrate portion and at least one region that is insulatedly isolated from other regions on the same surface. The design incorporates burying means made of an oxide film, which allows for a high withstand voltage and a short production process. Another notable patent is for a semiconductor power device featuring walls of an inverted mesa shape. This device includes an anode region formed from two joined semiconductor substrates, creating a high-resistance layer and a low-resistance layer. The configuration allows for a high withstand voltage and the use of large diameter wafers.

Career Highlights

Throughout his career, Mitutaka Katada has worked with notable companies such as Nippon Soken, Inc. and Nippon Steel Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Mitutaka has collaborated with several professionals in his field, including Tadashi Hattori and Kazuhiro Tsuruta. These collaborations have further enriched his work and contributed to advancements in semiconductor technology.

Conclusion

Mitutaka Katada's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a key figure in the industry. His work continues to influence the development of efficient semiconductor devices.

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