The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 1991
Filed:
Jul. 09, 1990
Applicant:
Inventors:
Nobuyoshi Sakakibara, Nishio, JP;
Mitutaka Katada, Nishio, JP;
Seizi Huzino, Anjo, JP;
Tadashi Hattori, Okazaki, JP;
Assignee:
Nippon Soken, Inc., Nishio, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 59 ; 357-4 ; 357 237 ; 357 60 ; 437973 ;
Abstract
In a method of producing a semiconductor device, an amorphous silicon layer is deposited on a polycrystalline silicon layer formed on an insulator layer (SiO.sub.2). Ions are implanted into the amorphous silicon layer while heat treating the amorphous silicon layer at a low temperature thereby forming a solid-phase growth layer, and a transistor is formed of the solid-phase growth layer.