The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 1989
Filed:
Jun. 03, 1987
Nobuyoshi Sakakibara, Nishio, JP;
Mitutaka Katada, Nishio, JP;
Minoru Ohta, Okazaki, JP;
Tadashi Hattori, Okazaki, JP;
Takayuki Tominaga, Okazaki, JP;
Nippon Soken, Inc., Nishio, JP;
Abstract
In a semiconductor device having mainly vertical semiconductor elements, a plurality of semiconductor elements are formed in spaced relationship from each other on an insulation layer formed on a substrate and therefore completed isolated electrically from each other. A plurality of semiconductor intermetallic compound layers used as electrodes are formed independently in the same spaced relationship as the semiconductor elements for the respective semiconductor elements, making it possible to determine the potential for each semiconductor element as desired. Both N-type DMOS and P-type DMOS or the like can thus be formed on a single seminconductor single crystal substrate.