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Mitsutoshi Koyama

USPTO Granted Patents = 9

Average Co-Inventor Count = 2.8

ph-index = 6

Forward Citations = 136(Granted Patents)

Location History:

Koganei, JP (1984 - 1995)
Tokyo, JP (1992 - 1996)
Yokkaichi, JP (1999 - 2004)

Company Filing History:

9 out of 52,735

Kabushiki Kaisha Toshiba

Years Active: 1984-2004

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9 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6812136 - Method of making a semiconductor device having a multilayer metal film of titanium/titanium nitride/tungsten/tungsten carbide (2004-11-02),

2. 6424045 - Semiconductor device with pure copper wirings and method of manufacturing a semiconductor device with pure copper wirings (2002-07-23),

3. 5990008 - Semiconductor device with pure copper wirings and method of (1999-11-23),

4. 5589421 - Method of manufacturing annealed films (1996-12-31),

5. 5380399 - Method of treating semiconductor substrates (1995-01-10),

6. 5189503 - High dielectric capacitor having low current leakage (1993-02-23),

7. 5127365 - Vertical heat-treatment apparatus for semiconductor parts (1992-07-07),

8. 5111272 - Semiconductor device having element regions electrically isolated from (1992-05-05),

9. 4485000 - Sputtering target supporting device (1984-11-27),

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